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- Manufacturer No：SIA917DJ-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SIA917DJ-T1-GE3
- SKU：351957
- Description：MOSFET 2P-CH 20V 4.5A SC70-6
User Guide
User Guide
SIA917DJ-T1-GE3 Details
MOSFET 2P-CH 20V 4.5A SC70-6
SIA917DJ-T1-GE3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Part Status: Obsolete
- Number of Terminations: 6
- Pin Count: 6
- Gate to Source Voltage (Vgs): 12V
- Element Configuration: Dual
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 20V
- Transistor Application: SWITCHING
- Subcategory: Other Transistors
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Turn On Delay Time: 20 ns
- Drain Current-Max (Abs) (ID): 3.3A
- Resistance: 110mOhm
- Series: TrenchFET?
- Vgs(th) (Max) @ Id: 1.5V @ 250μA
- Threshold Voltage: -1V
- Nominal Vgs: -1 V
- Continuous Drain Current (ID): -4.5A
- Rds On (Max) @ Id, Vgs: 110m Ω @ 2.5A, 4.5V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- Lead Free: Lead Free
- Published: 2016
- Number of Pins: 6
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- REACH SVHC: Unknown
- Pulsed Drain Current-Max (IDM): 10A
- Operating Temperature: -55°C~150°C TJ
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Fall Time (Typ): 10 ns
- Turn-Off Delay Time: 15 ns
- Max Power Dissipation: 6.5W
- Drain to Source Breakdown Voltage: -20V
- FET Feature: Logic Level Gate
- Rise Time: 45ns
- FET Type: 2 P-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Package / Case: PowerPAK? SC-70-6 Dual
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
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