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- Manufacturer No：IRF830
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF830
- SKU：3608349
- Description：N-Channel 500 V 4.5A (Tc) 74W (Tc) Through Hole TO-220AB
User Guide
User Guide
IRF830 Details
N-Channel 500 V 4.5A (Tc) 74W (Tc) Through Hole TO-220AB
IRF830 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Radiation Hardening: No
- JESD-609 Code: e3
- Packaging: Tube
- Pin Count: 3
- Terminal Finish: Matte Tin (Sn)
- Transistor Element Material: SILICON
- Voltage - Rated DC: 500V
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Package / Case: TO-220-3
- Current Rating: 4.5A
- JEDEC-95 Code: TO-220AB
- Rise Time: 8ns
- Pulsed Drain Current-Max (IDM): 18A
- Turn On Delay Time: 11.5 ns
- Power Dissipation-Max: 100W Tc
- Current - Continuous Drain (Id) @ 25°C: 4.5A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
- Feedback Cap-Max (Crss): 55 pF
- Additional Feature: HIGH VOLTAGE, FAST SWITCHING
- Mounting Type: Through Hole
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Terminations: 3
- Lead Free: Contains Lead
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 500V
- Power Dissipation: 100W
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Operating Temperature: 150°C TJ
- Subcategory: FET General Purpose Power
- Continuous Drain Current (ID): 4.5A
- JESD-30 Code: R-PSFM-T3
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Fall Time (Typ): 5 ns
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Series: PowerMESH?
- Avalanche Energy Rating (Eas): 290 mJ
- Turn On Time-Max (ton): 102ns
- Rds On (Max) @ Id, Vgs: 1.5 Ω @ 2.7A, 10V
- Base Part Number: IRF8
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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