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IRFU420PBF123
  • Manufacturer No:
    IRFU420PBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    213530
  • Description:
    MOSFET N-CH 500V 2.4A I-PAK
  • Quantity:
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Inventory:2732
  • Qty Unit Price price
  • 1 $1.064 $1.064
  • 10 $1.053 $10.53
  • 100 $1.042 $104.2
  • 1000 $1.031 $1031
  • 10000 $1.02 $10200

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IRFU420PBF
  • Manufacturer No:
    IRFU420PBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFU420PBF
  • SKU:
    213530
  • Description:
    MOSFET N-CH 500V 2.4A I-PAK

IRFU420PBF Details

MOSFET N-CH 500V 2.4A I-PAK

IRFU420PBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Number of Channels: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Packaging: Tube
  • Number of Pins: 3
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 40
  • REACH SVHC: Unknown
  • Transistor Element Material: SILICON
  • Voltage - Rated DC: 500V
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Threshold Voltage: 4V
  • Operating Mode: ENHANCEMENT MODE
  • Case Connection: DRAIN
  • Length: 6.73mm
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Continuous Drain Current (ID): 2.4A
  • Lead Length: 9.65mm
  • Additional Feature: AVALANCHE RATED
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Power Dissipation: 42W
  • Weight: 329.988449mg
  • Avalanche Energy Rating (Eas): 400 mJ
  • Current - Continuous Drain (Id) @ 25°C: 2.4A Tc
  • Rds On (Max) @ Id, Vgs: 3 Ω @ 1.4A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Factory Lead Time: 12 Weeks
  • Number of Terminations: 3
  • Pin Count: 3
  • Terminal Finish: Matte Tin (Sn)
  • Published: 2008
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Drain to Source Breakdown Voltage: 500V
  • Width: 2.39mm
  • Pulsed Drain Current-Max (IDM): 8A
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Subcategory: FET General Purpose Power
  • Resistance: 3Ohm
  • Current Rating: 2.4A
  • Turn On Delay Time: 8 ns
  • Height: 6.22mm
  • Fall Time (Typ): 16 ns
  • Turn-Off Delay Time: 33 ns
  • Rise Time: 8.6 ns
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Power Dissipation-Max: 2.5W Ta 42W Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V

Excellent

Based on reviews

Excellent

Based on reviews

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