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  • Manufacturer No:
    BC847CTT1G
  • Manufacturer:
  • Category:
    Transistors - Bipolar (BJT) - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    3614114
  • Description:
    Cut Tape (CT) Surface Mount NPN Single Bipolar (BJT) Transistor 420 @ 2mA 5V 100mA 200mW 100MHz
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  • Manufacturer No:
    BC847CTT1G
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - Bipolar (BJT) - Single
  • Datasheet:
    BC847CTT1G
  • SKU:
    3614114
  • Description:
    Cut Tape (CT) Surface Mount NPN Single Bipolar (BJT) Transistor 420 @ 2mA 5V 100mA 200mW 100MHz

BC847CTT1G Details

Cut Tape (CT) Surface Mount NPN Single Bipolar (BJT) Transistor 420 @ 2mA 5V 100mA 200mW 100MHz

BC847CTT1G Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • RoHS Status: RoHS Compliant
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Part Status: Obsolete
  • Number of Terminations: 3
  • Pin Count: 3
  • Terminal Form: GULL WING
  • Time@Peak Reflow Temperature-Max (s): 40
  • Terminal Finish: Tin (Sn)
  • Element Configuration: Single
  • Current Rating: 100mA
  • Frequency: 100MHz
  • Gain Bandwidth Product: 100MHz
  • Packaging: Cut Tape (CT)
  • Halogen Free: Halogen Free
  • Polarity/Channel Type: NPN
  • Collector Emitter Breakdown Voltage: 45V
  • Voltage - Rated DC: 45V
  • Subcategory: Other Transistors
  • Collector Emitter Saturation Voltage: 600mV
  • Lifecycle Status: LAST SHIPMENTS (Last Updated: 2 days ago)
  • Package / Case: SC-75, SOT-416
  • Base Part Number: BC847*TT
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Terminal Position: DUAL
  • Number of Pins: 3
  • Collector Base Voltage (VCBO): 50V
  • Peak Reflow Temperature (Cel): 260
  • Published: 2009
  • Transistor Element Material: SILICON
  • Emitter Base Voltage (VEBO): 6V
  • Max Collector Current: 100mA
  • Transition Frequency: 100MHz
  • Operating Temperature: -55°C~150°C TJ
  • Max Power Dissipation: 200mW
  • Transistor Type: NPN
  • Power Dissipation: 300mW
  • Collector Emitter Voltage (VCEO): 45V
  • Max Breakdown Voltage: 45V
  • Transistor Application: AMPLIFIER
  • hFE Min: 270
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA 5V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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