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- Manufacturer No：PBSS5250T,215
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：PBSS5250T,215
- SKU：3954073
- Description：Bipolar (BJT) Transistor PNP 50 V 2 A 100MHz 480 mW Surface Mount TO-236AB
User Guide
User Guide
PBSS5250T,215 Details
Bipolar (BJT) Transistor PNP 50 V 2 A 100MHz 480 mW Surface Mount TO-236AB
PBSS5250T,215 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Emitter Base Voltage (VEBO): 5V
- Number of Pins: 3
- Collector Emitter Breakdown Voltage: 50V
- Collector Emitter Voltage (VCEO): 50V
- Terminal Form: GULL WING
- Factory Lead Time: 4 Weeks
- Published: 2009
- Transistor Element Material: SILICON
- Max Collector Current: 2A
- Transition Frequency: 100MHz
- Transistor Application: SWITCHING
- Transistor Type: PNP
- Operating Temperature: 150°C TJ
- Max Power Dissipation: 480mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A 2V
- Base Part Number: PBSS5250
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Terminations: 3
- Pin Count: 3
- Max Breakdown Voltage: 50V
- Collector Base Voltage (VCBO): 50V
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- Frequency: 100MHz
- Gain Bandwidth Product: 100MHz
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type: PNP
- Current - Collector Cutoff (Max): 100nA ICBO
- Power Dissipation: 480mW
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
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