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- Manufacturer No：SI8901EDB-T2-E1
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI8901EDB-T2-E1
- SKU：361517
- Description：MOSFET 2P-CH 20V 3.5A 6-MFP
User Guide
User Guide
SI8901EDB-T2-E1 Details
MOSFET 2P-CH 20V 3.5A 6-MFP
SI8901EDB-T2-E1 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Lead Free: Lead Free
- Qualification Status: Not Qualified
- Number of Pins: 6
- REACH SVHC: No SVHC
- Reach Compliance Code: unknown
- Published: 2011
- Time@Peak Reflow Temperature-Max (s): 40
- Transistor Element Material: SILICON
- Terminal Position: BOTTOM
- Terminal Form: BALL
- Transistor Application: SWITCHING
- Subcategory: Other Transistors
- Drain Current-Max (Abs) (ID): 3.5A
- Terminal Finish: TIN SILVER COPPER
- Drain to Source Resistance: 60mOhm
- Series: TrenchFET?
- Turn-Off Delay Time: 1.3 μs
- Rise Time: 2.2 μs
- Turn On Delay Time: 2.3 μs
- Continuous Drain Current (ID): -4.4A
- Vgs(th) (Max) @ Id: 1V @ 350μA
- Base Part Number: SI8901
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- Part Status: Obsolete
- Number of Terminations: 6
- Pin Count: 6
- Peak Reflow Temperature (Cel): 260
- Max Power Dissipation: 1W
- Gate to Source Voltage (Vgs): 12V
- Element Configuration: Dual
- Drain to Source Breakdown Voltage: 20V
- Operating Temperature: -55°C~150°C TJ
- JESD-609 Code: e1
- Operating Mode: ENHANCEMENT MODE
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Current - Continuous Drain (Id) @ 25°C: 3.5A
- Resistance: 60mOhm
- FET Feature: Logic Level Gate
- Power Dissipation: 1.7W
- Fall Time (Typ): 2.2 μs
- Rds On Max: 60 mΩ
- Threshold Voltage: -450mV
- Package / Case: 6-MICRO FOOT?CSP
- FET Type: 2 P-Channel (Dual) Common Drain
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