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  • Manufacturer No:
    SI9926CDY-T1-GE3
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    Get the PDF file
  • SKU:
    368809
  • Description:
    Dual N-Channel 20 V 0.018 Ohm 3.1 W Surface Mount Power Mosfet - SOIC-8
  • Quantity:
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  • Payment:
Inventory:18368
  • Qty Unit Price price
  • 1 $1482.863 $1482.863
  • 10 $1468.181 $14681.81
  • 100 $1453.644 $145364.4
  • 1000 $1439.251 $1439251
  • 10000 $1425 $14250000

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  • Manufacturer No:
    SI9926CDY-T1-GE3
  • Manufacturer:
    Vishay
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    SI9926CDY-T1-GE3
  • SKU:
    368809
  • Description:
    Dual N-Channel 20 V 0.018 Ohm 3.1 W Surface Mount Power Mosfet - SOIC-8

SI9926CDY-T1-GE3 Details

Dual N-Channel 20 V 0.018 Ohm 3.1 W Surface Mount Power Mosfet - SOIC-8

SI9926CDY-T1-GE3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Terminations: 8
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Gate to Source Voltage (Vgs): 12V
  • Max Junction Temperature (Tj): 150°C
  • Element Configuration: Dual
  • Length: 5mm
  • Drain to Source Voltage (Vdss): 20V
  • Width: 4mm
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Continuous Drain Current (ID): 8A
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Turn-Off Delay Time: 35 ns
  • FET Feature: Logic Level Gate
  • FET Type: 2 N-Channel (Dual)
  • Subcategory: FET General Purpose Powers
  • Max Power Dissipation: 3.1W
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Base Part Number: SI9926
  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 8
  • Pin Count: 8
  • REACH SVHC: No SVHC
  • Published: 2011
  • Time@Peak Reflow Temperature-Max (s): 30
  • Factory Lead Time: 14 Weeks
  • Transistor Element Material: SILICON
  • Power Dissipation: 2W
  • Drain to Source Breakdown Voltage: 20V
  • Operating Temperature: -55°C~150°C TJ
  • Drain Current-Max (Abs) (ID): 8A
  • Height: 1.75mm
  • Threshold Voltage: 1.5V
  • Fall Time (Typ): 10 ns
  • Turn On Delay Time: 15 ns
  • Rise Time: 12 ns
  • Series: TrenchFET?
  • Resistance: 18mOhm
  • Vgs(th) (Max) @ Id: 1.5V @ 250μA
  • Weight: 186.993455mg
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
  • Rds On (Max) @ Id, Vgs: 18m Ω @ 8.3A, 4.5V

Vishay — Manufacturer Introduction

Vishay Intertechnology is one of the world's largest manufacturers of discrete semiconductors and passive electronic components. Vishay has grown through acquisitions to include such top names as Dale, Sfernice, Draloric, Sprague, Vitramon, Siliconix, General Semiconductor, BCcomponents, and Beyschlag. Vishay's portfolio of brands represents an unmatched collection of discrete semiconductors and passive components. All of these brands and products are part of one global manufacturer: Vishay.

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