SQ2310ES-T1_GE3Vishay Siliconix
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    • Manufacturer No：
      SQ2310ES-T1_GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      369291
    • Description：
      Automotive N-Channel 20 V (D-S) 175 °C MOSFET
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    Inventory:908
    • Qty Unit Price price
    • 1 $1.088 $1.088
    • 10 $1.077 $10.77
    • 100 $1.066 $106.6
    • 1000 $1.055 $1055
    • 10000 $1.044 $10440

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    • Manufacturer No：
      SQ2310ES-T1_GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SQ2310ES-T1_GE3
    • SKU：
      369291
    • Description：
      Automotive N-Channel 20 V (D-S) 175 °C MOSFET

    User Guide

    User Guide

    SQ2310ES-T1_GE3 Details

    Automotive N-Channel 20 V (D-S) 175 °C MOSFET

    SQ2310ES-T1_GE3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Packaging: Tape & Reel (TR)
    • Published: 2016
    • FET Type: N-Channel
    • Operating Temperature: -55°C~175°C TJ
    • Series: TrenchFET?
    • Vgs (Max): ±8V
    • Drive Voltage (Max Rds On,Min Rds On): 1.5V 4.5V
    • Supplier Device Package: TO-236
    • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Factory Lead Time: 12 Weeks
    • Drain to Source Voltage (Vdss): 20V
    • Technology: MOSFET (Metal Oxide)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Vgs(th) (Max) @ Id: 1V @ 250μA
    • Drain to Source Resistance: 24mOhm
    • Current - Continuous Drain (Id) @ 25°C: 6A Tc
    • Power Dissipation-Max: 2W Tc
    • Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
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