SUM110P06-07L-E3Vishay Siliconix
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    • Manufacturer No：
      SUM110P06-07L-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      372671
    • Description：
      MOSFET P-CH 60V 110A D2PAK
    • Quantity：
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    Inventory:69331
    • Qty Unit Price price
    • 1 $3.031 $3.031
    • 10 $3 $30
    • 100 $2.97 $297
    • 1000 $2.94 $2940
    • 10000 $2.91 $29100

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    • Manufacturer No：
      SUM110P06-07L-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SUM110P06-07L-E3
    • SKU：
      372671
    • Description：
      MOSFET P-CH 60V 110A D2PAK

    User Guide

    User Guide

    SUM110P06-07L-E3 Details

    MOSFET P-CH 60V 110A D2PAK

    SUM110P06-07L-E3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Pins: 3
    • REACH SVHC: No SVHC
    • Drain to Source Voltage (Vdss): 60V
    • Time@Peak Reflow Temperature-Max (s): 30
    • Max Junction Temperature (Tj): 175°C
    • Element Configuration: Single
    • Gate to Source Voltage (Vgs): 20V
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • JESD-30 Code: R-PSSO-G2
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • FET Type: P-Channel
    • Vgs(th) (Max) @ Id: 3V @ 250μA
    • Length: 10.41mm
    • Threshold Voltage: -3V
    • Drain to Source Breakdown Voltage: -60V
    • Rise Time: 160 ns
    • Current - Continuous Drain (Id) @ 25°C: 110A Tc
    • Nominal Vgs: -3 V
    • Resistance: 6.9mOhm
    • Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 25V
    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • Number of Channels: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Pin Count: 4
    • Terminal Form: GULL WING
    • Peak Reflow Temperature (Cel): 260
    • Terminal Finish: Matte Tin (Sn)
    • Factory Lead Time: 14 Weeks
    • Transistor Element Material: SILICON
    • Height: 5.08mm
    • Packaging: Cut Tape (CT)
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Subcategory: Other Transistors
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Turn On Delay Time: 20 ns
    • Width: 9.65mm
    • Series: TrenchFET?
    • Turn-Off Delay Time: 110 ns
    • Pulsed Drain Current-Max (IDM): 240A
    • Power Dissipation: 3.75W
    • Fall Time (Typ): 240 ns
    • Weight: 1.946308g
    • Continuous Drain Current (ID): -11A
    • Power Dissipation-Max: 3.75W Ta 375W Tc
    • Gate Charge (Qg) (Max) @ Vgs: 345nC @ 10V
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