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- Manufacturer No：SQ2398ES-T1_GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SQ2398ES-T1_GE3
- SKU：381534
- Description：Trans MOSFET N-CH 100V 1.6A Automotive 3-Pin SOT-23 T/R
User Guide
User Guide
SQ2398ES-T1_GE3 Details
Trans MOSFET N-CH 100V 1.6A Automotive 3-Pin SOT-23 T/R
SQ2398ES-T1_GE3 Specification Parameters
- Part Status: Active
- Mounting Type: Surface Mount
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Terminal Position: DUAL
- Number of Terminations: 3
- Drain to Source Voltage (Vdss): 100V
- Reach Compliance Code: unknown
- Transistor Element Material: SILICON
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Configuration: SINGLE WITH BUILT-IN DIODE
- Drain Current-Max (Abs) (ID): 1.6A
- Feedback Cap-Max (Crss): 12 pF
- Series: Automotive, AEC-Q101, TrenchFET?
- Current - Continuous Drain (Id) @ 25°C: 1.6A Tc
- Rds On (Max) @ Id, Vgs: 300m Ω @ 1.5A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Surface Mount: YES
- Factory Lead Time: 12 Weeks
- Terminal Form: GULL WING
- DS Breakdown Voltage-Min: 100V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- JESD-30 Code: R-PDSO-G3
- Drain-source On Resistance-Max: 0.3Ohm
- Vgs(th) (Max) @ Id: 3.5V @ 250μA
- Power Dissipation-Max: 2W Tc
- Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 152pF @ 50V
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