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- Manufacturer No：IXFH13N80
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXFH13N80
- SKU：3895920
- Description：MOSFET N-CH 800V 13A TO-247AD
User Guide
User Guide
IXFH13N80 Details
MOSFET N-CH 800V 13A TO-247AD
IXFH13N80 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mount: Through Hole
- Pbfree Code: yes
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Current Rating: 13A
- Operating Temperature: -55°C~150°C TJ
- JESD-609 Code: e1
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Drain to Source Breakdown Voltage: 800V
- Case Connection: DRAIN
- Package / Case: TO-247-3
- Additional Feature: AVALANCHE RATED
- Fall Time (Typ): 32 ns
- Power Dissipation-Max: 300W Tc
- Series: HiPerFET?
- Current - Continuous Drain (Id) @ 25°C: 13A Tc
- Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
- Rds On (Max) @ Id, Vgs: 800m Ω @ 500mA, 10V
- Mounting Type: Through Hole
- Number of Elements: 1
- Moisture Sensitivity Level (MSL): Not Applicable
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Factory Lead Time: 8 Weeks
- Number of Terminations: 3
- Pin Count: 3
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Part Status: Not For New Designs
- Continuous Drain Current (ID): 13A
- Published: 2000
- FET Type: N-Channel
- Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Mode: ENHANCEMENT MODE
- Voltage - Rated DC: 800V
- Power Dissipation: 300W
- Subcategory: FET General Purpose Power
- Resistance: 800mOhm
- Recovery Time: 250 ns
- Rise Time: 33 ns
- Pulsed Drain Current-Max (IDM): 52A
- Turn-Off Delay Time: 63 ns
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
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