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- Manufacturer No：IXFH80N20Q
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXFH80N20Q
- SKU：3896498
- Description：MOSFET N-CH 200V 80A TO-247AD
User Guide
User Guide
IXFH80N20Q Details
MOSFET N-CH 200V 80A TO-247AD
IXFH80N20Q Specification Parameters
- Mounting Type: Through Hole
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Factory Lead Time: 8 Weeks
- Number of Terminations: 3
- Pin Count: 3
- Drain to Source Breakdown Voltage: 200V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Published: 2000
- FET Type: N-Channel
- Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Rise Time: 50 ns
- Continuous Drain Current (ID): 80A
- Package / Case: TO-247-3
- Additional Feature: AVALANCHE RATED
- Current - Continuous Drain (Id) @ 25°C: 80A Tc
- Power Dissipation: 360W
- Power Dissipation-Max: 360W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
- Mount: Through Hole
- RoHS Status: RoHS Compliant
- Pbfree Code: yes
- Moisture Sensitivity Level (MSL): Not Applicable
- Part Status: Obsolete
- Packaging: Tube
- Number of Pins: 3
- Voltage - Rated DC: 200V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- JESD-609 Code: e1
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Subcategory: FET General Purpose Power
- Current Rating: 80A
- Fall Time (Typ): 20 ns
- Turn-Off Delay Time: 75 ns
- Resistance: 28mOhm
- Series: HiPerFET?
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Rds On (Max) @ Id, Vgs: 28m Ω @ 500mA, 10V
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