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- Manufacturer No：IRFP250
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFP250
- SKU：3910657
- Description：Tube Through Hole N-Channel Single Mosfet Transistor 30A Tc 30A 190W 98ns
User Guide
User Guide
IRFP250 Details
Tube Through Hole N-Channel Single Mosfet Transistor 30A Tc 30A 190W 98ns
IRFP250 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- RoHS Status: RoHS Compliant
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Continuous Drain Current (ID): 30A
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Pulsed Drain Current-Max (IDM): 120A
- JEDEC-95 Code: TO-247AD
- Rise Time: 130ns
- Power Dissipation-Max: 190W Tc
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Rds On (Max) @ Id, Vgs: 85m Ω @ 18A, 10V
- Mounting Type: Through Hole
- Number of Elements: 1
- ECCN Code: EAR99
- Part Status: Obsolete
- Number of Terminations: 3
- Pin Count: 3
- Drain to Source Breakdown Voltage: 200V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Published: 2000
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Subcategory: FET General Purpose Power
- Package / Case: TO-247-3
- Turn-Off Delay Time: 110 ns
- Current - Continuous Drain (Id) @ 25°C: 30A Tc
- Power Dissipation: 190W
- Drain-source On Resistance-Max: 0.085Ohm
- Fall Time (Typ): 98 ns
- Input Capacitance (Ciss) (Max) @ Vds: 2970pF @ 25V
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