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- Manufacturer No：IXTH11P50
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXTH11P50
- SKU：3910790
- Description：MOSFET P-CH 500V 11A TO-247AD
User Guide
User Guide
IXTH11P50 Details
MOSFET P-CH 500V 11A TO-247AD
IXTH11P50 Specification Parameters
- Part Status: Active
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Number of Terminations: 3
- Pin Count: 3
- Published: 2005
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 500V
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Power Dissipation: 300W
- Fall Time (Typ): 35 ns
- FET Type: P-Channel
- Package / Case: TO-247-3
- Vgs(th) (Max) @ Id: 5V @ 250μA
- JEDEC-95 Code: TO-247AD
- Pulsed Drain Current-Max (IDM): 44A
- Rise Time: 27ns
- Drain to Source Breakdown Voltage: -500V
- Current Rating: -11A
- Rds On (Max) @ Id, Vgs: 750m Ω @ 5.5A, 10V
- RoHS Status: ROHS3 Compliant
- Mount: Through Hole
- ECCN Code: EAR99
- Radiation Hardening: No
- Packaging: Tube
- Number of Pins: 3
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Factory Lead Time: 17 Weeks
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Subcategory: Other Transistors
- Case Connection: DRAIN
- Turn-Off Delay Time: 35 ns
- Continuous Drain Current (ID): 11A
- Additional Feature: AVALANCHE RATED
- Resistance: 750mOhm
- Power Dissipation-Max: 300W Tc
- Current - Continuous Drain (Id) @ 25°C: 11A Tc
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Voltage - Rated DC: -500V
- Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
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