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- Manufacturer No：IXFN48N50
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXFN48N50
- SKU：3911347
- Description：MOSFET N-CH 500V 48A SOT-227B
User Guide
User Guide
IXFN48N50 Details
MOSFET N-CH 500V 48A SOT-227B
IXFN48N50 Specification Parameters
- RoHS Status: ROHS3 Compliant
- ECCN Code: EAR99
- Moisture Sensitivity Level (MSL): Not Applicable
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Number of Terminations: 4
- Factory Lead Time: 8 Weeks
- Number of Pins: 3
- REACH SVHC: No SVHC
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Voltage - Rated DC: 500V
- Dual Supply Voltage: 500V
- Part Status: Not For New Designs
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Subcategory: FET General Purpose Power
- Resistance: 100mOhm
- Mount: Chassis Mount, Screw
- Turn-Off Delay Time: 100 ns
- Additional Feature: AVALANCHE RATED
- Package / Case: SOT-227-4, miniBLOC
- Current Rating: 48A
- Power Dissipation: 520W
- Pulsed Drain Current-Max (IDM): 192A
- Current - Continuous Drain (Id) @ 25°C: 48A Tc
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
- Number of Elements: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Pin Count: 4
- Packaging: Tube
- Qualification Status: Not Qualified
- Mounting Type: Chassis Mount
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 500V
- Gate to Source Voltage (Vgs): 20V
- Published: 2002
- FET Type: N-Channel
- Threshold Voltage: 4V
- Terminal Form: UNSPECIFIED
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Terminal Position: UPPER
- Terminal Finish: Nickel (Ni)
- Fall Time (Typ): 30 ns
- Rise Time: 60 ns
- HTS Code: 8541.29.00.95
- Nominal Vgs: 4 V
- Continuous Drain Current (ID): 48A
- Series: HiPerFET?
- JESD-30 Code: R-PUFM-X4
- Power Dissipation-Max: 520W Tc
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Rds On (Max) @ Id, Vgs: 100m Ω @ 500mA, 10V
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