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- Manufacturer No：IXFE44N50QD2
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXFE44N50QD2
- SKU：3895942
- Description：MOSFET N-CH 500V 39A SOT-227B
User Guide
User Guide
IXFE44N50QD2 Details
MOSFET N-CH 500V 39A SOT-227B
IXFE44N50QD2 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Pbfree Code: yes
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 4
- Packaging: Tube
- Mounting Type: Chassis Mount
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Case Connection: ISOLATED
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Operating Temperature: -40°C~150°C TJ
- Terminal Position: UPPER
- Turn-Off Delay Time: 75 ns
- Continuous Drain Current (ID): 39A
- Drain-source On Resistance-Max: 0.12Ohm
- Avalanche Energy Rating (Eas): 2500 mJ
- Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 39A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 1
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Number of Pins: 4
- Pin Count: 4
- Qualification Status: Not Qualified
- Mount: Chassis Mount
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 500V
- Published: 2004
- FET Type: N-Channel
- Power Dissipation: 400W
- Terminal Form: UNSPECIFIED
- Vgs (Max): ±20V
- Subcategory: FET General Purpose Power
- Fall Time (Typ): 10 ns
- Package / Case: SOT-227-4, miniBLOC
- Series: HiPerFET?
- Rise Time: 22ns
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Power Dissipation-Max: 400W Tc
- Pulsed Drain Current-Max (IDM): 176A
- Rds On (Max) @ Id, Vgs: 120m Ω @ 22A, 10V
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