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- Manufacturer No：IXTH26N60P
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXTH26N60P
- SKU：3912141
- Description：MOSFET N-CH 600V 26A TO-247
User Guide
User Guide
IXTH26N60P Details
MOSFET N-CH 600V 26A TO-247
IXTH26N60P Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Pbfree Code: yes
- Lead Free: Lead Free
- Number of Terminations: 3
- Pin Count: 3
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 600V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Package / Case: TO-247-3
- Additional Feature: AVALANCHE RATED
- Pulsed Drain Current-Max (IDM): 65A
- Fall Time (Typ): 21 ns
- Current Rating: 26A
- JEDEC-95 Code: TO-247AD
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Series: PolarHV?
- Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Packaging: Tube
- Number of Pins: 3
- Published: 2006
- Transistor Element Material: SILICON
- Voltage - Rated DC: 600V
- Gate to Source Voltage (Vgs): 30V
- JESD-609 Code: e1
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Factory Lead Time: 28 Weeks
- Vgs (Max): ±30V
- Turn-Off Delay Time: 75 ns
- Vgs(th) (Max) @ Id: 5V @ 250μA
- Resistance: 270mOhm
- Rise Time: 27 ns
- Continuous Drain Current (ID): 26A
- Power Dissipation: 460W
- Current - Continuous Drain (Id) @ 25°C: 26A Tc
- Power Dissipation-Max: 460W Tc
- Rds On (Max) @ Id, Vgs: 270m Ω @ 500mA, 10V
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