Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:0
- Qty Unit Price price
- 1 $13.403 $13.403
- 10 $13.27 $132.7
- 100 $13.138 $1313.8
- 1000 $13.007 $13007
- 10000 $12.8773 $128773
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：IXFH6N100
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXFH6N100
- SKU：3912242
- Description：MOSFET N-CH 1KV 6A TO-247AD
User Guide
User Guide
IXFH6N100 Details
MOSFET N-CH 1KV 6A TO-247AD
IXFH6N100 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mount: Through Hole
- ECCN Code: EAR99
- Moisture Sensitivity Level (MSL): Not Applicable
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Factory Lead Time: 8 Weeks
- Number of Terminations: 3
- Pin Count: 3
- REACH SVHC: No SVHC
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Threshold Voltage: 4.5V
- Published: 2000
- Voltage - Rated DC: 1kV
- Dual Supply Voltage: 1kV
- Drain Current-Max (Abs) (ID): 6A
- FET Type: N-Channel
- Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Mode: ENHANCEMENT MODE
- Drain to Source Voltage (Vdss): 1000V
- Subcategory: FET General Purpose Power
- Pulsed Drain Current-Max (IDM): 24A
- Turn-Off Delay Time: 100 ns
- Additional Feature: AVALANCHE RATED
- HTS Code: 8541.29.00.95
- Power Dissipation: 180W
- Current - Continuous Drain (Id) @ 25°C: 6A Tc
- Power Dissipation-Max: 180W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
- Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Part Status: Not For New Designs
- Operating Temperature: -55°C~150°C TJ
- JESD-609 Code: e1
- Drain to Source Breakdown Voltage: 1kV
- Current Rating: 6A
- Continuous Drain Current (ID): 6A
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Resistance: 2Ohm
- Package / Case: TO-247-3
- Fall Time (Typ): 60 ns
- Recovery Time: 250 ns
- Rise Time: 40ns
- Series: HiPerFET?
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Nominal Vgs: 4.5 V
- Rds On (Max) @ Id, Vgs: 2 Ω @ 500mA, 10V
Search for similar products
IXFH6N100 Similar Products
The four parts on the right have similar specifications to IXYS & IXFH6N100
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
