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  • Manufacturer No:
    IXTP60N20T
  • Manufacturer:
    IXYS
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    3912378
  • Description:
    MOSFET Trench POWER MOSFETs 200v, 60A
  • Quantity:
      • RFQ
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Inventory:10
  • Qty Unit Price price
  • 1 $1019.795 $1019.795
  • 10 $1009.698 $10096.98
  • 100 $999.7 $99970
  • 1000 $989.801 $989801
  • 10000 $980 $9800000

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  • Manufacturer No:
    IXTP60N20T
  • Manufacturer:
    IXYS
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IXTP60N20T
  • SKU:
    3912378
  • Description:
    MOSFET Trench POWER MOSFETs 200v, 60A

IXTP60N20T Details

MOSFET Trench POWER MOSFETs 200v, 60A

IXTP60N20T Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • Number of Terminations: 3
  • Qualification Status: Not Qualified
  • Reach Compliance Code: unknown
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Terminal Position: SINGLE
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Vgs (Max): ±20V
  • Package / Case: TO-220-3
  • Case Connection: DRAIN
  • JEDEC-95 Code: TO-220AB
  • Pulsed Drain Current-Max (IDM): 150A
  • Additional Feature: AVALANCHE RATED
  • Drain-source On Resistance-Max: 0.04Ohm
  • Avalanche Energy Rating (Eas): 700 mJ
  • Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
  • Series: Trench?
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Packaging: Tube
  • Pin Count: 3
  • Drain to Source Breakdown Voltage: 200V
  • Published: 2010
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Factory Lead Time: 26 Weeks
  • Power Dissipation: 500W
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Subcategory: FET General Purpose Power
  • Continuous Drain Current (ID): 60A
  • JESD-30 Code: R-PSFM-T3
  • Vgs(th) (Max) @ Id: 5V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C: 60A Tc
  • Power Dissipation-Max: 500W Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V
  • Rds On (Max) @ Id, Vgs: 40m Ω @ 30A, 10V

Excellent

Based on reviews

Excellent

Based on reviews

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