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- Manufacturer No：IXTA3N120
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXTA3N120
- SKU：3912499
- Description：Trans MOSFET N-CH 1.1KV 3A 3-Pin(2+Tab) TO-263
User Guide
User Guide
IXTA3N120 Details
Trans MOSFET N-CH 1.1KV 3A 3-Pin(2+Tab) TO-263
IXTA3N120 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Number of Pins: 3
- Continuous Drain Current (ID): 3A
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Vgs (Max): ±20V
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Voltage - Rated DC: 1.2kV
- Resistance: 4.5Ohm
- Fall Time (Typ): 18 ns
- Turn-Off Delay Time: 32 ns
- Power Dissipation-Max: 200W Tc
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Input Capacitance: 1.35nF
- Supplier Device Package: TO-263 (IXTA)
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Lead Free: Lead Free
- Packaging: Tube
- Current Rating: 3A
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Published: 2004
- Power Dissipation: 150W
- Technology: MOSFET (Metal Oxide)
- Factory Lead Time: 28 Weeks
- Rise Time: 15ns
- Drain to Source Voltage (Vdss): 1200V
- Drain to Source Resistance: 4.5Ohm
- Vgs(th) (Max) @ Id: 5V @ 250μA
- Drain to Source Breakdown Voltage: 1.1kV
- Current - Continuous Drain (Id) @ 25°C: 3A Tc
- Rds On Max: 4.5 Ω
- Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
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