IXFK38N80Q2IXYS
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    • Manufacturer No：
      IXFK38N80Q2
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      3912586
    • Description：
      MOSFET N-CH 800V 38A TO-264
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    • Manufacturer No：
      IXFK38N80Q2
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXFK38N80Q2
    • SKU：
      3912586
    • Description：
      MOSFET N-CH 800V 38A TO-264

    User Guide

    User Guide

    IXFK38N80Q2 Details

    MOSFET N-CH 800V 38A TO-264

    IXFK38N80Q2 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Pbfree Code: yes
    • Lead Free: Lead Free
    • Number of Terminations: 3
    • Pin Count: 3
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Published: 2004
    • JESD-609 Code: e1
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Drain to Source Breakdown Voltage: 800V
    • Subcategory: FET General Purpose Power
    • Vgs (Max): ±30V
    • Turn-Off Delay Time: 60 ns
    • Additional Feature: AVALANCHE RATED
    • Continuous Drain Current (ID): 38A
    • Series: HiPerFET?
    • Drain-source On Resistance-Max: 0.22Ohm
    • Current - Continuous Drain (Id) @ 25°C: 38A Tc
    • Vgs(th) (Max) @ Id: 4.5V @ 8mA
    • Power Dissipation: 735W
    • Input Capacitance (Ciss) (Max) @ Vds: 8340pF @ 25V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Packaging: Tube
    • Number of Pins: 3
    • Factory Lead Time: 10 Weeks
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 30V
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
    • Operating Mode: ENHANCEMENT MODE
    • Case Connection: DRAIN
    • Turn On Delay Time: 20 ns
    • Fall Time (Typ): 12 ns
    • Length: 19.96mm
    • Rise Time: 16 ns
    • Height: 26.16mm
    • Package / Case: TO-264-3, TO-264AA
    • Width: 5.13mm
    • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
    • Avalanche Energy Rating (Eas): 4000 mJ
    • Power Dissipation-Max: 735W Tc
    • Rds On (Max) @ Id, Vgs: 220m Ω @ 19A, 10V
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