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- Manufacturer No：IXFH16N90Q
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：
Get the PDF file - SKU：3912899
- Description：MOSFET N-CH 900V 16A TO-247
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- Manufacturer No：IXFH16N90Q
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXFH16N90Q
- SKU：3912899
- Description：MOSFET N-CH 900V 16A TO-247
User Guide
User Guide
IXFH16N90Q Details
MOSFET N-CH 900V 16A TO-247
IXFH16N90Q Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- RoHS Status: RoHS Compliant
- Lead Free: Lead Free
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Package / Case: TO-247-3
- Additional Feature: AVALANCHE RATED
- JEDEC-95 Code: TO-247AD
- Series: HiPerFET?
- Turn-Off Delay Time: 56 ns
- Rise Time: 24ns
- Avalanche Energy Rating (Eas): 1500 mJ
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Pin Count: 3
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Published: 2002
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Continuous Drain Current (ID): 16A
- Case Connection: DRAIN
- Drain to Source Breakdown Voltage: 900V
- Fall Time (Typ): 14 ns
- Resistance: 650mOhm
- Pulsed Drain Current-Max (IDM): 64A
- Power Dissipation: 360W
- Current - Continuous Drain (Id) @ 25°C: 16A Tc
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Power Dissipation-Max: 360W Tc
- Rds On (Max) @ Id, Vgs: 650m Ω @ 8A, 10V
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