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- Manufacturer No：IXTH20N60
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXTH20N60
- SKU：3913118
- Description：MOSFET N-CH 600V 20A TO-247AD
User Guide
User Guide
IXTH20N60 Details
MOSFET N-CH 600V 20A TO-247AD
IXTH20N60 Specification Parameters
- Part Status: Active
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 600V
- Current Rating: 20A
- Operating Temperature: -55°C~150°C TJ
- Case Connection: ISOLATED
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Power Dissipation: 300W
- Pulsed Drain Current-Max (IDM): 80A
- Fall Time (Typ): 40 ns
- Resistance: 350mOhm
- Power Dissipation-Max: 300W Tc
- Current - Continuous Drain (Id) @ 25°C: 20A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
- Series: MegaMOS?
- RoHS Status: ROHS3 Compliant
- Mount: Through Hole
- Pbfree Code: yes
- Moisture Sensitivity Level (MSL): Not Applicable
- Factory Lead Time: 8 Weeks
- Number of Terminations: 3
- Pin Count: 3
- Transistor Element Material: SILICON
- Voltage - Rated DC: 600V
- Gate to Source Voltage (Vgs): 20V
- Continuous Drain Current (ID): 20A
- Published: 2000
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Subcategory: FET General Purpose Power
- Package / Case: TO-247-3
- Turn-Off Delay Time: 70 ns
- JEDEC-95 Code: TO-247AD
- Vgs(th) (Max) @ Id: 4.5V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Rise Time: 43ns
- Rds On (Max) @ Id, Vgs: 350m Ω @ 10A, 10V
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