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- Manufacturer No：IXFH26N60Q
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXFH26N60Q
- SKU：3910095
- Description：MOSFET N-CH 600V 26A TO-247AD
User Guide
User Guide
IXFH26N60Q Details
MOSFET N-CH 600V 26A TO-247AD
IXFH26N60Q Specification Parameters
- Mounting Type: Through Hole
- Termination: Through Hole
- RoHS Status: RoHS Compliant
- Pbfree Code: yes
- Moisture Sensitivity Level (MSL): Not Applicable
- Part Status: Obsolete
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Transistor Element Material: SILICON
- Voltage - Rated DC: 600V
- Dual Supply Voltage: 600V
- Published: 2002
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Additional Feature: AVALANCHE RATED
- Resistance: 250mOhm
- Turn-Off Delay Time: 80 ns
- Current Rating: 26A
- JEDEC-95 Code: TO-247AD
- Series: HiPerFET?
- Power Dissipation-Max: 360W Tc
- Current - Continuous Drain (Id) @ 25°C: 26A Tc
- Nominal Vgs: 4.5 V
- Rds On (Max) @ Id, Vgs: 250m Ω @ 13A, 10V
- Mount: Through Hole
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Factory Lead Time: 8 Weeks
- Number of Terminations: 3
- Pin Count: 3
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 600V
- Gate to Source Voltage (Vgs): 20V
- Threshold Voltage: 4.5V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Package / Case: TO-247-3
- Reverse Recovery Time: 250 ns
- Fall Time (Typ): 16 ns
- Rise Time: 32 ns
- Continuous Drain Current (ID): 26A
- Weight: 6g
- Power Dissipation: 360W
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
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