IXFN100N50PIXYS
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    • Manufacturer No：
      IXFN100N50P
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      3913164
    • Description：
      Single N-Channel 500 Vds 49 mOhm 1040 W Power Mosfet - SOT-227B
    • Quantity：
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    Inventory:85
    • Qty Unit Price price
    • 1 $44.612 $44.612
    • 10 $44.17 $441.7
    • 100 $43.732 $4373.2
    • 1000 $43.299 $43299
    • 10000 $42.87 $428700

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    • Manufacturer No：
      IXFN100N50P
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXFN100N50P
    • SKU：
      3913164
    • Description：
      Single N-Channel 500 Vds 49 mOhm 1040 W Power Mosfet - SOT-227B

    User Guide

    User Guide

    IXFN100N50P Details

    Single N-Channel 500 Vds 49 mOhm 1040 W Power Mosfet - SOT-227B

    IXFN100N50P Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Threshold Voltage: 5V
    • Number of Terminations: 4
    • Packaging: Tube
    • Mounting Type: Chassis Mount
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 30V
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Terminal Finish: Nickel (Ni)
    • Vgs (Max): ±30V
    • Continuous Drain Current (ID): 90A
    • Fall Time (Typ): 26 ns
    • Resistance: 49mOhm
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Series: PolarHV?
    • Avalanche Energy Rating (Eas): 5000 mJ
    • Power Dissipation-Max: 1040W Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 1
    • Pbfree Code: yes
    • Lead Free: Lead Free
    • Number of Pins: 4
    • Pin Count: 4
    • REACH SVHC: No SVHC
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Drain to Source Breakdown Voltage: 500V
    • Published: 2003
    • Case Connection: ISOLATED
    • Technology: MOSFET (Metal Oxide)
    • Terminal Form: UNSPECIFIED
    • Factory Lead Time: 30 Weeks
    • Terminal Position: UPPER
    • Mount: Chassis Mount, Screw
    • Pulsed Drain Current-Max (IDM): 250A
    • Turn-Off Delay Time: 110 ns
    • Package / Case: SOT-227-4, miniBLOC
    • Current - Continuous Drain (Id) @ 25°C: 90A Tc
    • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
    • Rise Time: 29ns
    • Power Dissipation: 1.04kW
    • Additional Feature: UL RECOGNIZED, AVALANCHE RATED
    • Rds On (Max) @ Id, Vgs: 49m Ω @ 50A, 10V
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