IXFN80N50Q3IXYS
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    IXFN80N50Q3123
    • Manufacturer No：
      IXFN80N50Q3
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      3896156
    • Description：
      MOSFET N-CH 500V 63A SOT-227
    • Quantity：
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    Inventory:0
    • Qty Unit Price price
    • 1 $42.739 $42.739
    • 10 $42.315 $423.15
    • 100 $41.896 $4189.6
    • 1000 $41.481 $41481
    • 10000 $41.07 $410700

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    IXFN80N50Q3
    • Manufacturer No：
      IXFN80N50Q3
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXFN80N50Q3
    • SKU：
      3896156
    • Description：
      MOSFET N-CH 500V 63A SOT-227

    User Guide

    User Guide

    IXFN80N50Q3 Details

    MOSFET N-CH 500V 63A SOT-227

    IXFN80N50Q3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • ECCN Code: EAR99
    • Number of Terminations: 4
    • Packaging: Tube
    • Mounting Type: Chassis Mount
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Gate to Source Voltage (Vgs): 30V
    • Case Connection: ISOLATED
    • Technology: MOSFET (Metal Oxide)
    • Terminal Form: UNSPECIFIED
    • Additional Feature: UL RECOGNIZED
    • Subcategory: FET General Purpose Power
    • Turn On Delay Time: 30 ns
    • Mount: Chassis Mount, Panel, Screw
    • Height: 9.6mm
    • Continuous Drain Current (ID): 63A
    • Series: HiPerFET?
    • Drain-source On Resistance-Max: 0.065Ohm
    • Length: 38.23mm
    • Width: 25.07mm
    • Current - Continuous Drain (Id) @ 25°C: 63A Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 1
    • Number of Pins: 4
    • Pin Count: 4
    • Qualification Status: Not Qualified
    • Published: 2011
    • Transistor Element Material: SILICON
    • Drain to Source Breakdown Voltage: 500V
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Factory Lead Time: 30 Weeks
    • Terminal Position: UPPER
    • Vgs (Max): ±30V
    • Rise Time: 250 ns
    • Package / Case: SOT-227-4, miniBLOC
    • Power Dissipation: 780W
    • Turn-Off Delay Time: 43 ns
    • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
    • Avalanche Energy Rating (Eas): 5000 mJ
    • Power Dissipation-Max: 780W Tc
    • Vgs(th) (Max) @ Id: 6.5V @ 8mA
    • Rds On (Max) @ Id, Vgs: 65m Ω @ 40A, 10V
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