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- Manufacturer No：IXTA3N100D2
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXTA3N100D2
- SKU：3915901
- Description：Trans MOSFET N-CH 1KV 3A 3-Pin(2+Tab) TO-263AA
User Guide
User Guide
IXTA3N100D2 Details
Trans MOSFET N-CH 1KV 3A 3-Pin(2+Tab) TO-263AA
IXTA3N100D2 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Number of Elements: 1
- JESD-609 Code: e3
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Pin Count: 3
- Qualification Status: Not Qualified
- Terminal Finish: Matte Tin (Sn)
- Reach Compliance Code: not_compliant
- Terminal Position: SINGLE
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- JESD-30 Code: R-PSSO-G2
- Case Connection: DRAIN
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Current - Continuous Drain (Id) @ 25°C: 3A Tc
- JEDEC-95 Code: TO-263AA
- Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 5V
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Continuous Drain Current (ID): 3A
- Terminal Form: GULL WING
- Published: 2011
- Transistor Element Material: SILICON
- Factory Lead Time: 24 Weeks
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Drain to Source Voltage (Vdss): 1000V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Subcategory: FET General Purpose Power
- Power Dissipation-Max: 125W Tc
- FET Feature: Depletion Mode
- Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
- Rds On (Max) @ Id, Vgs: 5.5 Ω @ 1.5A, 0V
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