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- Manufacturer No：M29W400DT55N6
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：M29W400DT55N6
- SKU：3922925
- Description：EAR99 Surface Mount M29W400 Tray ic memory 55ns 12mm 10mA 4Mb
User Guide
User Guide
M29W400DT55N6 Details
EAR99 Surface Mount M29W400 Tray ic memory 55ns 12mm 10mA 4Mb
M29W400DT55N6 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- ECCN Code: EAR99
- Command User Interface: YES
- Toggle Bit: YES
- Part Status: Obsolete
- Terminal Position: DUAL
- Packaging: Tray
- JESD-609 Code: e0
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Programming Voltage: 3V
- Operating Temperature: -40°C~85°C TA
- Memory Format: FLASH
- Number of Pins: 48
- Supply Voltage-Max (Vsup): 3.6V
- Memory Interface: Parallel
- Terminal Finish: TIN LEAD
- Memory Type: Non-Volatile
- Voltage - Supply: 2.7V~3.6V
- Peak Reflow Temperature (Cel): 235
- HTS Code: 8542.32.00.51
- Access Time (Max): 55 ns
- Length: 18.4mm
- Density: 4 Mb
- Organization: 256KX16
- Sector Size: 16K8K32K64K
- Number of Sectors/Size: 1217
- Base Part Number: M29W400
- Mounting Type: Surface Mount
- Number of Functions: 1
- Radiation Hardening: No
- Data Polling: YES
- Ready/Busy: YES
- Alternate Memory Width: 8
- Supply Voltage: 3.3V
- Pbfree Code: no
- Memory Width: 16
- Time@Peak Reflow Temperature-Max (s): 30
- Published: 2007
- Terminal Pitch: 0.5mm
- Number of Terminations: 48
- Pin Count: 48
- Supply Voltage-Min (Vsup): 2.7V
- Height Seated (Max): 1.2mm
- Nominal Supply Current: 10mA
- Width: 12mm
- Sync/Async: Asynchronous
- Technology: FLASH - NOR
- Power Supplies: 3/3.3V
- Write Cycle Time - Word, Page: 55ns
- Standby Current-Max: 0.0001A
- Package / Case: 48-TFSOP (0.724, 18.40mm Width)
- Boot Block: TOP
- Additional Feature: TOP BOOT BLOCK
- Memory Size: 4Mb 512K x 8 256K x 16
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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