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- Manufacturer No：MT48LC4M16A2P-6A:J
- Manufacturer：Micron
- Category：Memory
- Datasheet：MT48LC4M16A2P-6A:J
- SKU：3923522
- Description：e3 Surface Mount MT48LC4M16A2 Bulk ic memory 167MHz 5.4ns 22.22mm 100mA
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MT48LC4M16A2P-6A:J Details
e3 Surface Mount MT48LC4M16A2 Bulk ic memory 167MHz 5.4ns 22.22mm 100mA
MT48LC4M16A2P-6A:J Specification Parameters
- Part Status: Active
- Packaging: Bulk
- Mount: Surface Mount
- Number of Ports: 1
- JESD-609 Code: e3
- Contact Plating: Tin
- Supply Voltage: 3.3V
- Memory Width: 16
- Published: 2015
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage-Min (Vsup): 3V
- Nominal Supply Current: 100mA
- Memory Interface: Parallel
- Operating Temperature: 0°C~70°C TA
- Memory Type: Volatile
- Number of Terminations: 54
- Data Bus Width: 16b
- Memory Format: DRAM
- Write Cycle Time - Word, Page: 12ns
- Technology: SDRAM
- Access Time: 5.4ns
- Interleaved Burst Length: 1248
- Package / Case: 54-TSOP (0.400, 10.16mm Width)
- Address Bus Width: 14b
- Memory Size: 64Mb 4M x 16
- Base Part Number: MT48LC4M16A2
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Functions: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Terminal Position: DUAL
- Operating Supply Voltage: 3.3V
- Peak Reflow Temperature (Cel): 260
- Factory Lead Time: 4 Weeks
- Time@Peak Reflow Temperature-Max (s): 30
- Supply Voltage-Max (Vsup): 3.6V
- Terminal Pitch: 0.8mm
- Height Seated (Max): 1.2mm
- Output Characteristics: 3-STATE
- Voltage - Supply: 3V~3.6V
- Number of Pins: 54
- I/O Type: COMMON
- Refresh Cycles: 4096
- Additional Feature: AUTO/SELF REFRESH
- Clock Frequency: 167MHz
- Length: 22.22mm
- Sequential Burst Length: 1248FP
- Organization: 4MX16
- Density: 64 Mb
- Standby Current-Max: 0.0025A
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Micron — Manufacturer Introduction
Micron Technology is a world leader in innovative memory solutions that transform how theworld uses Information. Through our global brands - Micron, Crucial and Ballistix - weoffer the industry's broadest portfolio, and are the only company that manufactures today'smajor memory and storage technologies: DRAM, NAND, NOR, and 3D XPoint memory.
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