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  • Manufacturer No:
    NAND04GW3B2DN6E
  • Manufacturer:
  • Category:
    Memory
  • Datasheet:
    Get the PDF file
  • SKU:
    3923696
  • Description:
    3A991.B.1.A Surface Mount NAND04G Tray ic memory 25000ns 18.4mm 30mA 4Gb
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  • Manufacturer No:
    NAND04GW3B2DN6E
  • Manufacturer:
    Micron Technology Inc.
  • Category:
    Memory
  • Datasheet:
    NAND04GW3B2DN6E
  • SKU:
    3923696
  • Description:
    3A991.B.1.A Surface Mount NAND04G Tray ic memory 25000ns 18.4mm 30mA 4Gb

NAND04GW3B2DN6E Details

3A991.B.1.A Surface Mount NAND04G Tray ic memory 25000ns 18.4mm 30mA 4Gb

NAND04GW3B2DN6E Specification Parameters

  • Toggle Bit: NO
  • RoHS Status: ROHS3 Compliant
  • Mount: Surface Mount
  • Radiation Hardening: No
  • Ready/Busy: YES
  • Terminal Position: DUAL
  • Moisture Sensitivity Level (MSL): 3 (168 Hours)
  • Programming Voltage: 3V
  • Terminal Pitch: 0.5mm
  • Number of Terminations: 48
  • Pin Count: 48
  • Part Status: Discontinued
  • Supply Voltage-Min (Vsup): 2.7V
  • Height Seated (Max): 1.2mm
  • Memory Type: Non-Volatile
  • Voltage - Supply: 2.7V~3.6V
  • HTS Code: 8542.32.00.51
  • Write Cycle Time - Word, Page: 25ns
  • Technology: FLASH - NAND
  • ECCN Code: 3A991.B.1.A
  • Standby Current-Max: 0.00005A
  • Number of Sectors/Size: 4K
  • Organization: 512MX8
  • Address Bus Width: 29b
  • Base Part Number: NAND04G
  • Data Polling: NO
  • Mounting Type: Surface Mount
  • Number of Functions: 1
  • Command User Interface: YES
  • Memory Width: 8
  • Packaging: Tray
  • Supply Voltage: 3V
  • Operating Temperature: -40°C~85°C TA
  • Memory Format: FLASH
  • Number of Pins: 48
  • Supply Voltage-Max (Vsup): 3.6V
  • Published: 2004
  • Memory Interface: Parallel
  • Nominal Supply Current: 30mA
  • Word Size: 8b
  • Sync/Async: Asynchronous
  • Power Supplies: 3/3.3V
  • Length: 18.4mm
  • Page Size: 2kB
  • Package / Case: 48-TFSOP (0.724, 18.40mm Width)
  • Sector Size: 128K
  • Memory Size: 4Gb 512M x 8
  • Density: 4 Gb
  • Access Time (Max): 25000 ns

Micron Technology Inc. — Manufacturer Introduction

In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.

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