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- Manufacturer No：SI2301-TP
- Manufacturer：Micro Commercial Co
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI2301-TP
- SKU：3924509
- Description：MOSFET P-CH 20V 2.8A SOT-23
User Guide
User Guide
SI2301-TP Details
MOSFET P-CH 20V 2.8A SOT-23
SI2301-TP Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Surface Mount: YES
- Terminal Position: DUAL
- Number of Terminations: 3
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- Terminal Finish: Matte Tin (Sn)
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 20V
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Package / Case: TO-236-3, SC-59, SOT-23-3
- JESD-30 Code: R-PDSO-G3
- Drain Current-Max (Abs) (ID): 2.8A
- Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
- Additional Feature: ULTRA-LOW RESISTANCE
- Vgs(th) (Max) @ Id: 450mV @ 250μA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 6V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Factory Lead Time: 12 Weeks
- Pin Count: 3
- Terminal Form: GULL WING
- Time@Peak Reflow Temperature-Max (s): 10
- Published: 2007
- Pulsed Drain Current-Max (IDM): 10A
- DS Breakdown Voltage-Min: 20V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- FET Type: P-Channel
- Vgs (Max): ±8V
- Drain-source On Resistance-Max: 0.12Ohm
- Power Dissipation-Max: 1.25W Ta
- Current - Continuous Drain (Id) @ 25°C: 2.8A Ta
- Rds On (Max) @ Id, Vgs: 120m Ω @ 2.8A, 4.5V
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