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- Manufacturer No：M29W640FT70N6E
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：M29W640FT70N6E
- SKU：3925685
- Description：3A991.B.1.A Surface Mount M29W640 Tray ic memory 70ns 12mm 10mA 64Mb
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User Guide
M29W640FT70N6E Details
3A991.B.1.A Surface Mount M29W640 Tray ic memory 70ns 12mm 10mA 64Mb
M29W640FT70N6E Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Functions: 1
- Radiation Hardening: No
- Command User Interface: YES
- Toggle Bit: YES
- Common Flash Interface: YES
- Lead Free: Lead Free
- Alternate Memory Width: 8
- Packaging: Tray
- Termination: SMD/SMT
- Peak Reflow Temperature (Cel): 260
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage: 3V
- Operating Temperature: -40°C~85°C TA
- Memory Format: FLASH
- Number of Pins: 48
- Voltage: 2.7V
- Height Seated (Max): 1.2mm
- Memory Type: Non-Volatile
- Voltage - Supply: 2.7V~3.6V
- Sync/Async: Asynchronous
- HTS Code: 8542.32.00.51
- Access Time (Max): 70 ns
- Length: 18.4mm
- Standby Current-Max: 0.0001A
- Boot Block: TOP
- Density: 64 Mb
- Additional Feature: TOP BOOT BLOCK
- Page Size: 4/8words
- Base Part Number: M29W640
- Mounting Type: Surface Mount
- Pbfree Code: yes
- Surface Mount: YES
- Data Polling: YES
- Ready/Busy: YES
- JESD-609 Code: e3
- Part Status: Obsolete
- Terminal Position: DUAL
- Memory Width: 16
- REACH SVHC: No SVHC
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 30
- Published: 2006
- Terminal Pitch: 0.5mm
- Number of Terminations: 48
- Pin Count: 48
- Memory Interface: Parallel
- Nominal Supply Current: 10mA
- Width: 12mm
- Contact Plating: Gold, Tin
- Technology: FLASH - NOR
- Power Supplies: 3/3.3V
- Write Cycle Time - Word, Page: 70ns
- ECCN Code: 3A991.B.1.A
- Package / Case: 48-TFSOP (0.724, 18.40mm Width)
- Organization: 4MX16
- Memory Size: 64Mb 8M x 8 4M x 16
- Sector Size: 8K64K
- Number of Sectors/Size: 8127
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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