MT41K256M16HA-125 IT:EMicron
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    • Manufacturer No：
      MT41K256M16HA-125 IT:E
    • Manufacturer：
      Micron
    • Category：
      Memory
    • Datasheet：
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    • SKU：
      3926063
    • Description：
      Obsolete 3-STATE 2013 BOTTOM ic memory -40C~95C TC 1.283V 4Gb 256M x 16 0.016A
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    • Manufacturer No：
      MT41K256M16HA-125 IT:E
    • Manufacturer：
      Micron
    • Category：
      Memory
    • Datasheet：
      MT41K256M16HA-125 IT:E
    • SKU：
      3926063
    • Description：
      Obsolete 3-STATE 2013 BOTTOM ic memory -40C~95C TC 1.283V 4Gb 256M x 16 0.016A

    User Guide

    User Guide

    MT41K256M16HA-125 IT:E Details

    Obsolete 3-STATE 2013 BOTTOM ic memory -40C~95C TC 1.283V 4Gb 256M x 16 0.016A

    MT41K256M16HA-125 IT:E Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Functions: 1
    • ECCN Code: EAR99
    • Surface Mount: YES
    • Interleaved Burst Length: 8
    • Packaging: Tray
    • Qualification Status: Not Qualified
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Terminal Pitch: 0.8mm
    • Height Seated (Max): 1.2mm
    • Length: 14mm
    • Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
    • Memory Type: Volatile
    • Pin Count: 96
    • I/O Type: COMMON
    • Supply Voltage: 1.35V
    • Refresh Cycles: 8192
    • Additional Feature: AUTO/SELF REFRESH
    • Package / Case: 96-TFBGA
    • Operating Temperature: -40°C~95°C TC
    • JESD-30 Code: R-PBGA-B96
    • Supply Voltage-Min (Vsup): 1.283V
    • Memory Density: 4294967296 bit
    • Organization: 256MX16
    • Base Part Number: MT41K256M16
    • Mounting Type: Surface Mount
    • Number of Ports: 1
    • Pbfree Code: yes
    • Part Status: Obsolete
    • Sequential Burst Length: 8
    • Published: 2013
    • Memory Width: 16
    • Moisture Sensitivity Level (MSL): 3 (168 Hours)
    • Terminal Position: BOTTOM
    • Memory Interface: Parallel
    • JESD-609 Code: e1
    • Output Characteristics: 3-STATE
    • Width: 9mm
    • Number of Terminations: 96
    • Operating Mode: SYNCHRONOUS
    • Memory Format: DRAM
    • Power Supplies: 1.35V
    • Clock Frequency: 800MHz
    • Supply Voltage-Max (Vsup): 1.45V
    • Technology: SDRAM - DDR3L
    • Voltage - Supply: 1.283V~1.45V
    • Standby Current-Max: 0.016A
    • HTS Code: 8542.32.00.36
    • Memory Size: 4Gb 256M x 16
    • Access Time: 13.75ns
    • Supply Current-Max: 0.243mA
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    Micron — Manufacturer Introduction

    Micron Technology is a world leader in innovative memory solutions that transform how theworld uses Information. Through our global brands - Micron, Crucial and Ballistix - weoffer the industry's broadest portfolio, and are the only company that manufactures today'smajor memory and storage technologies: DRAM, NAND, NOR, and 3D XPoint memory.

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