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- Manufacturer No：NAND01GW3B2BZA6E
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：NAND01GW3B2BZA6E
- SKU：3930802
- Description：3A991.B.1.A Surface Mount NAND01G-A Tray ic memory 20ns 12mm 30mA 1Gb
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User Guide
NAND01GW3B2BZA6E Details
3A991.B.1.A Surface Mount NAND01G-A Tray ic memory 20ns 12mm 30mA 1Gb
NAND01GW3B2BZA6E Specification Parameters
- Toggle Bit: NO
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Pbfree Code: yes
- Ready/Busy: YES
- Memory Width: 8
- Qualification Status: Not Qualified
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage: 3V
- Operating Temperature: -40°C~85°C TA
- Supply Voltage-Max (Vsup): 3.6V
- Published: 2004
- Terminal Pitch: 0.8mm
- JESD-609 Code: e1
- Memory Type: Non-Volatile
- Length: 12mm
- Sync/Async: Asynchronous
- HTS Code: 8542.32.00.51
- Number of Terminations: 63
- Pin Count: 63
- Power Supplies: 3/3.3V
- ECCN Code: 3A991.B.1.A
- Number of Sectors/Size: 1K
- Memory Size: 1Gb 128M x 8
- Organization: 128MX8
- Address Bus Width: 28b
- Package / Case: 63-TFBGA
- Data Polling: NO
- Mounting Type: Surface Mount
- Number of Functions: 1
- Command User Interface: YES
- Part Status: Obsolete
- Packaging: Tray
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Programming Voltage: 3V
- Memory Format: FLASH
- Terminal Position: BOTTOM
- Supply Voltage-Min (Vsup): 2.7V
- Memory Interface: Parallel
- Nominal Supply Current: 30mA
- Word Size: 8b
- Voltage - Supply: 2.7V~3.6V
- Access Time (Max): 20 ns
- Height Seated (Max): 1.05mm
- Number of Pins: 63
- Terminal Finish: TIN SILVER COPPER
- Technology: FLASH - NAND
- Write Cycle Time - Word, Page: 30ns
- Standby Current-Max: 0.00005A
- Sector Size: 128K
- Density: 1 Gb
- Page Size: 2Kwords
- Base Part Number: NAND01G-A
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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