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- Manufacturer No：MT47H256M8THN-3:H
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：MT47H256M8THN-3:H
- SKU：3932529
- Description：Obsolete 3-STATE 2002 BOTTOM ic memory 0C~85C TC 1.8V 2Gb 0.014A
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MT47H256M8THN-3:H Details
Obsolete 3-STATE 2002 BOTTOM ic memory 0C~85C TC 1.8V 2Gb 0.014A
MT47H256M8THN-3:H Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Radiation Hardening: No
- Part Status: Obsolete
- Packaging: Tray
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage: 1.8V
- Published: 2002
- Terminal Pitch: 0.8mm
- Output Characteristics: 3-STATE
- Data Bus Width: 8b
- Memory Format: DRAM
- Voltage - Supply: 1.7V~1.9V
- Number of Pins: 63
- Clock Frequency: 333MHz
- Max Frequency: 667MHz
- Technology: SDRAM - DDR2
- Organization: 256MX8
- Access Time: 450ps
- Package / Case: 63-TFBGA
- Base Part Number: MT47H256M8
- Mounting Type: Surface Mount
- Pbfree Code: yes
- Lead Free: Lead Free
- Memory Width: 8
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Operating Supply Voltage: 1.8V
- Terminal Position: BOTTOM
- Memory Interface: Parallel
- Memory Type: Volatile
- I/O Type: COMMON
- Write Cycle Time - Word, Page: 15ns
- Number of Terminations: 63
- Refresh Cycles: 8192
- Address Bus Width: 17b
- Operating Temperature: 0°C~85°C TC
- Memory Size: 2Gb 256M x 8
- Standby Current-Max: 0.014A
- Density: 2 Gb
- Supply Current-Max: 0.192mA
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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