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- Manufacturer No：2N7002BKS,115
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：2N7002BKS,115
- SKU：3944144
- Description：MOSFET N, 60 V 0.5 A 295 mW SOT-363 | NXP 2N7002BKS115 (MOSFET N, 60 V 0.5 A 295 mW SOT-363 Transistors).
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2N7002BKS,115 Details
MOSFET N, 60 V 0.5 A 295 mW SOT-363 | NXP 2N7002BKS115 (MOSFET N, 60 V 0.5 A 295 mW SOT-363 Transistors).
2N7002BKS,115 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Pin Count: 6
- Drain to Source Voltage (Vdss): 60V
- Factory Lead Time: 4 Weeks
- Terminal Finish: Tin (Sn)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Drain Current-Max (Abs) (ID): 0.3A
- FET Feature: Logic Level Gate
- Additional Feature: LOGIC LEVEL COMPATIBLE
- Series: Automotive, AEC-Q101, TrenchMOS?
- Power - Max: 295mW
- Rds On (Max) @ Id, Vgs: 1.6 Ω @ 500mA, 10V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Packaging: Tape & Reel (TR)
- Surface Mount: YES
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Number of Terminations: 6
- Terminal Form: GULL WING
- DS Breakdown Voltage-Min: 60V
- Published: 2010
- Transistor Element Material: SILICON
- Current - Continuous Drain (Id) @ 25°C: 300mA
- Operating Temperature: 150°C TJ
- JESD-30 Code: R-PDSO-G6
- Package / Case: 6-TSSOP, SC-88, SOT-363
- FET Type: 2 N-Channel (Dual)
- Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id: 2.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
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