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  • Manufacturer No:
    BSS84AKW,115
  • Manufacturer:
    Nexperia USA Inc.
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    3958702
  • Description:
    MOSFET P-CH 50V 150MA SOT323
  • Quantity:
      • RFQ
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  • Material flow:
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Inventory:69585
  • Qty Unit Price price
  • 1 $43.708 $43.708
  • 10 $43.275 $432.75
  • 100 $42.846 $4284.6
  • 1000 $42.421 $42421
  • 10000 $42 $420000

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  • Manufacturer No:
    BSS84AKW,115
  • Manufacturer:
    Nexperia USA Inc.
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    BSS84AKW,115
  • SKU:
    3958702
  • Description:
    MOSFET P-CH 50V 150MA SOT323

BSS84AKW,115 Details

MOSFET P-CH 50V 150MA SOT323

BSS84AKW,115 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Surface Mount: YES
  • Lead Free: Lead Free
  • Terminal Position: DUAL
  • Number of Pins: 3
  • Drain to Source Voltage (Vdss): 50V
  • Published: 2011
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Gate to Source Voltage (Vgs): 20V
  • Continuous Drain Current (ID): 150mA
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Fall Time (Typ): 25 ns
  • Package / Case: SC-70, SOT-323
  • Rise Time: 11 ns
  • Drain to Source Breakdown Voltage: -50V
  • Additional Feature: LOGIC LEVEL COMPATIBLE
  • Series: Automotive, AEC-Q101, TrenchMOS?
  • Vgs(th) (Max) @ Id: 2.1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
  • Rds On (Max) @ Id, Vgs: 7.5 Ω @ 100mA, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Terminations: 3
  • Pin Count: 3
  • Terminal Form: GULL WING
  • Factory Lead Time: 4 Weeks
  • Transistor Element Material: SILICON
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • FET Type: P-Channel
  • Turn On Delay Time: 13 ns
  • Resistance: 7.5Ohm
  • Max Dual Supply Voltage: -50V
  • Turn-Off Delay Time: 48 ns
  • Power Dissipation: 260mW
  • Current - Continuous Drain (Id) @ 25°C: 150mA Ta
  • Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V
  • Power Dissipation-Max: 260mW Ta 830mW Tc

Excellent

Based on reviews

Excellent

Based on reviews

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