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- Manufacturer No：BSS84AK,215
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：BSS84AK,215
- SKU：3967303
- Description：MOSFET P-CH 50V TO-236AB
User Guide
User Guide
BSS84AK,215 Details
MOSFET P-CH 50V TO-236AB
BSS84AK,215 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- Surface Mount: YES
- Terminal Position: DUAL
- Number of Pins: 3
- Drain to Source Voltage (Vdss): 50V
- Terminal Form: GULL WING
- Published: 2011
- Time@Peak Reflow Temperature-Max (s): 30
- Terminal Finish: Tin (Sn)
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Configuration: SINGLE WITH BUILT-IN DIODE
- Additional Feature: LOGIC LEVEL COMPATIBLE
- Drain Current-Max (Abs) (ID): 0.18A
- Drain-source On Resistance-Max: 8.5Ohm
- Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
- Rds On (Max) @ Id, Vgs: 7.5 Ω @ 100mA, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- JESD-609 Code: e3
- Number of Terminations: 3
- Pin Count: 3
- DS Breakdown Voltage-Min: 50V
- Peak Reflow Temperature (Cel): 260
- Factory Lead Time: 4 Weeks
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- FET Type: P-Channel
- Series: Automotive, AEC-Q101, TrenchMOS?
- Vgs(th) (Max) @ Id: 2.1V @ 250μA
- Current - Continuous Drain (Id) @ 25°C: 180mA Ta
- Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V
- Power Dissipation-Max: 350mW Ta 1.14W Tc
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