PSMN2R0-30YL,115Nexperia USA Inc.
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    • Manufacturer No：
      PSMN2R0-30YL,115
    • Manufacturer：
      Nexperia USA Inc.
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      3976093
    • Description：
      PSMN2R0-30YL - N-channel 30 V 2 m? logic level MOSFET in LFPAK
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    Inventory:20769
    • Qty Unit Price price
    • 1 $1.719 $1.719
    • 10 $1.701 $17.01
    • 100 $1.684 $168.4
    • 1000 $1.667 $1667
    • 10000 $1.65 $16500

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    • Manufacturer No：
      PSMN2R0-30YL,115
    • Manufacturer：
      Nexperia USA Inc.
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      PSMN2R0-30YL,115
    • SKU：
      3976093
    • Description：
      PSMN2R0-30YL - N-channel 30 V 2 m? logic level MOSFET in LFPAK

    User Guide

    User Guide

    PSMN2R0-30YL,115 Details

    PSMN2R0-30YL - N-channel 30 V 2 m? logic level MOSFET in LFPAK

    PSMN2R0-30YL,115 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Terminations: 4
    • Qualification Status: Not Qualified
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Terminal Finish: Tin (Sn)
    • Terminal Position: SINGLE
    • DS Breakdown Voltage-Min: 30V
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Series: TrenchMOS?
    • Current - Continuous Drain (Id) @ 25°C: 100A Tc
    • JEDEC-95 Code: MO-235
    • Vgs(th) (Max) @ Id: 2.15V @ 1mA
    • Avalanche Energy Rating (Eas): 151 mJ
    • Pulsed Drain Current-Max (IDM): 667A
    • Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 12V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • Surface Mount: YES
    • Factory Lead Time: 12 Weeks
    • Pin Count: 4
    • Terminal Form: GULL WING
    • Published: 2011
    • Reach Compliance Code: not_compliant
    • Transistor Element Material: SILICON
    • Drain to Source Voltage (Vdss): 30V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Continuous Drain Current (ID): 100A
    • Case Connection: DRAIN
    • HTS Code: 8541.29.00.75
    • JESD-30 Code: R-PSSO-G4
    • Package / Case: SC-100, SOT-669
    • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
    • Drain-source On Resistance-Max: 0.0032Ohm
    • Power Dissipation-Max: 97W Tc
    • Rds On (Max) @ Id, Vgs: 2m Ω @ 15A, 10V
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