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- Manufacturer No：BUK9Y22-100E,115
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：BUK9Y22-100E,115
- SKU：3982235
- Description：BUK9Y22-100E - N-channel 100 V, 22 mO logic level MOSFET in LFPAK56
User Guide
User Guide
BUK9Y22-100E,115 Details
BUK9Y22-100E - N-channel 100 V, 22 mO logic level MOSFET in LFPAK56
BUK9Y22-100E,115 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- JESD-609 Code: e3
- Drive Voltage (Max Rds On,Min Rds On): 5V
- Number of Pins: 4
- Pin Count: 4
- Terminal Form: GULL WING
- Max Dual Supply Voltage: 100V
- Gate to Source Voltage (Vgs): 10V
- Terminal Position: SINGLE
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Configuration: SINGLE WITH BUILT-IN DIODE
- Additional Feature: AVALANCHE RATED
- Continuous Drain Current (ID): 49A
- Package / Case: SC-100, SOT-669
- Drain-source On Resistance-Max: 0.022Ohm
- Turn On Delay Time: 15.8 ns
- Power Dissipation-Max: 147W Tc
- Rise Time: 32.3ns
- Turn-Off Delay Time: 53.4 ns
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Surface Mount: YES
- Contact Plating: Tin
- Factory Lead Time: 12 Weeks
- Number of Terminations: 4
- Published: 2013
- Drain to Source Breakdown Voltage: 100V
- Reach Compliance Code: not_compliant
- Transistor Element Material: SILICON
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Vgs (Max): ±10V
- Series: Automotive, AEC-Q101, TrenchMOS?
- JEDEC-95 Code: MO-235
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Current - Continuous Drain (Id) @ 25°C: 49A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 4640pF @ 25V
- Fall Time (Typ): 31.1 ns
- Rds On (Max) @ Id, Vgs: 21.5m Ω @ 15A, 10V
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