Add to like
Add to project list
Inventory:52960
  • Qty Unit Price price
  • 1 $2.396 $2.396
  • 10 $2.372 $23.72
  • 100 $2.348 $234.8
  • 1000 $2.324 $2324
  • 10000 $2.3 $23000

Not the price you want? Send RFQ Now and we'll contact you ASAP

  • Manufacturer No:
    FDD8424H
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    FDD8424H
  • SKU:
    4039214
  • Description:
    Trans MOSFET N/P-CH 40V 9A/6.5A 5-Pin(4+Tab) TO-252 T/R

FDD8424H Details

Trans MOSFET N/P-CH 40V 9A/6.5A 5-Pin(4+Tab) TO-252 T/R

FDD8424H Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Channels: 2
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Terminal Form: GULL WING
  • Number of Pins: 5
  • Published: 2014
  • Transistor Element Material: SILICON
  • Factory Lead Time: 17 Weeks
  • Drain to Source Breakdown Voltage: 40V
  • Transistor Application: SWITCHING
  • Lifecycle Status: ACTIVE (Last Updated: 1 day ago)
  • Subcategory: Other Transistors
  • Length: 6.73mm
  • Continuous Drain Current (ID): 9A
  • Turn-Off Delay Time: 20 ns
  • Power - Max: 1.3W
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Rise Time: 3 ns
  • Series: PowerTrench?
  • JESD-30 Code: R-PSSO-G4
  • Max Power Dissipation: 3.1W
  • Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Height: 2.517mm
  • Rds On (Max) @ Id, Vgs: 24m Ω @ 9A, 10V
  • Base Part Number: FDD8424
  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Number of Terminations: 4
  • REACH SVHC: No SVHC
  • Max Junction Temperature (Tj): 150°C
  • Terminal Finish: Tin (Sn)
  • Terminal Position: SINGLE
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Operating Mode: ENHANCEMENT MODE
  • Threshold Voltage: 1.7V
  • Case Connection: DRAIN
  • Drain Current-Max (Abs) (ID): 9A
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Turn On Delay Time: 7 ns
  • Width: 6.22mm
  • Fall Time (Typ): 3 ns
  • FET Feature: Logic Level Gate
  • Resistance: 24mOhm
  • Power Dissipation: 3.1W
  • FET Type: N and P-Channel
  • Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
  • Weight: 260.37mg
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C: 9A 6.5A

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via