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  • Manufacturer No:
    FDC6420C
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    Get the PDF file
  • SKU:
    4115516
  • Description:
    ON SEMICONDUCTOR - FDC6420C - Dual MOSFET, N and P Channel, 3 A, 20 V, 0.05 ohm, 4.5 V, 900 mV
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  • Qty Unit Price price
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  • 10 $0.725 $7.25
  • 100 $0.717 $71.7
  • 1000 $0.709 $709
  • 10000 $0.7015 $7015

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  • Manufacturer No:
    FDC6420C
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    FDC6420C
  • SKU:
    4115516
  • Description:
    ON SEMICONDUCTOR - FDC6420C - Dual MOSFET, N and P Channel, 3 A, 20 V, 0.05 ohm, 4.5 V, 900 mV

FDC6420C Details

ON SEMICONDUCTOR - FDC6420C - Dual MOSFET, N and P Channel, 3 A, 20 V, 0.05 ohm, 4.5 V, 900 mV

FDC6420C Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Channels: 2
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Drain Current-Max (Abs) (ID): 3A
  • Factory Lead Time: 10 Weeks
  • Number of Pins: 6
  • Termination: SMD/SMT
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 30
  • Element Configuration: Dual
  • Transistor Element Material: SILICON
  • Dual Supply Voltage: 20V
  • Operating Temperature: -55°C~150°C TJ
  • Transistor Application: SWITCHING
  • Height: 900μm
  • Turn-Off Delay Time: 10 ns
  • Fall Time (Typ): 12 ns
  • Threshold Voltage: 900mV
  • Resistance: 70mOhm
  • FET Feature: Logic Level Gate
  • Vgs(th) (Max) @ Id: 1.5V @ 250μA
  • Power Dissipation: 960mW
  • Weight: 36mg
  • Nominal Vgs: 900 mV
  • Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 10V
  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Current Rating: 3A
  • Continuous Drain Current (ID): 3A
  • Number of Terminations: 6
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Gate to Source Voltage (Vgs): 12V
  • Max Junction Temperature (Tj): 150°C
  • Terminal Finish: Tin (Sn)
  • Drain to Source Breakdown Voltage: 20V
  • Published: 2017
  • Lifecycle Status: ACTIVE (Last Updated: 2 days ago)
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: Other Transistors
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Rise Time: 12 ns
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Max Power Dissipation: 700mW
  • Series: PowerTrench?
  • FET Type: N and P-Channel
  • Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Rds On (Max) @ Id, Vgs: 70m Ω @ 3A, 4.5V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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