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- Manufacturer No：SI3585CDV-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI3585CDV-T1-GE3
- SKU：321843
- Description：MOSFET 20 Volts 3.9 Amps 1.4 Watts
User Guide
User Guide
SI3585CDV-T1-GE3 Details
MOSFET 20 Volts 3.9 Amps 1.4 Watts
SI3585CDV-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Lead Free: Lead Free
- Terminal Position: DUAL
- Qualification Status: Not Qualified
- Number of Pins: 6
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Gate to Source Voltage (Vgs): 12V
- Max Junction Temperature (Tj): 150°C
- Transistor Element Material: SILICON
- Operating Temperature: -55°C~150°C TJ
- Height: 1.1mm
- Operating Mode: ENHANCEMENT MODE
- Rise Time: 10 ns
- Continuous Drain Current (ID): 2.1A
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Turn-Off Delay Time: 13 ns
- Turn On Delay Time: 3 ns
- Series: TrenchFET?
- Vgs(th) (Max) @ Id: 1.5V @ 250μA
- Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
- Resistance: 195mOhm
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
- Power - Max: 1.4W 1.3W
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- JESD-609 Code: e3
- Contact Plating: Tin
- Published: 2013
- Number of Terminations: 6
- Pin Count: 6
- REACH SVHC: No SVHC
- Reach Compliance Code: unknown
- Time@Peak Reflow Temperature-Max (s): 30
- Factory Lead Time: 14 Weeks
- Drain to Source Voltage (Vdss): 20V
- Transistor Application: SWITCHING
- Threshold Voltage: 1.5V
- Subcategory: Other Transistors
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Fall Time (Typ): 7 ns
- Max Power Dissipation: 1.3W
- Drain Current-Max (Abs) (ID): 3.9A
- FET Feature: Logic Level Gate
- Power Dissipation: 1.1W
- FET Type: N and P-Channel
- Weight: 19.986414mg
- JEDEC-95 Code: MO-193AA
- Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V
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