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  • Manufacturer No:
    FDC604P
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    4123751
  • Description:
    In a Pack of 10, P-Channel MOSFET, 5.5 A, 20 V, 6-Pin SOT-23 ON Semiconductor FDC604P
  • Quantity:
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Inventory:17
  • Qty Unit Price price
  • 1 $0.684 $0.684
  • 10 $0.677 $6.77
  • 100 $0.67 $67
  • 1000 $0.663 $663
  • 10000 $0.6555 $6555

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  • Manufacturer No:
    FDC604P
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    FDC604P
  • SKU:
    4123751
  • Description:
    In a Pack of 10, P-Channel MOSFET, 5.5 A, 20 V, 6-Pin SOT-23 ON Semiconductor FDC604P

FDC604P Details

In a Pack of 10, P-Channel MOSFET, 5.5 A, 20 V, 6-Pin SOT-23 ON Semiconductor FDC604P

FDC604P Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Terminal Position: DUAL
  • Number of Terminations: 6
  • Terminal Form: GULL WING
  • Max Junction Temperature (Tj): 150°C
  • Element Configuration: Single
  • Length: 3mm
  • Operating Temperature: -55°C~150°C TJ
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Lifecycle Status: ACTIVE (Last Updated: 1 day ago)
  • Width: 1.7mm
  • Power Dissipation: 1.6W
  • Turn On Delay Time: 13 ns
  • Rise Time: 11 ns
  • Voltage - Rated DC: -20V
  • Series: PowerTrench?
  • Resistance: 33mOhm
  • Vgs(th) (Max) @ Id: 1.5V @ 250μA
  • Power Dissipation-Max: 1.6W Ta
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
  • Current Rating: -5.5A
  • Nominal Vgs: -700 mV
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Factory Lead Time: 10 Weeks
  • Number of Pins: 6
  • REACH SVHC: No SVHC
  • Transistor Element Material: SILICON
  • Drain to Source Voltage (Vdss): 20V
  • Published: 2001
  • Technology: MOSFET (Metal Oxide)
  • Height: 1.1mm
  • Gate to Source Voltage (Vgs): 8V
  • Subcategory: Other Transistors
  • FET Type: P-Channel
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Fall Time (Typ): 11 ns
  • Drain to Source Breakdown Voltage: -20V
  • Turn-Off Delay Time: 90 ns
  • Vgs (Max): ±8V
  • Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
  • Threshold Voltage: -700mV
  • Weight: 36mg
  • Current - Continuous Drain (Id) @ 25°C: 5.5A Ta
  • Continuous Drain Current (ID): -5.5A
  • Input Capacitance (Ciss) (Max) @ Vds: 1926pF @ 10V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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