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Inventory:10
  • Qty Unit Price price
  • 1 $2.515 $2.515
  • 10 $2.49 $24.9
  • 100 $2.465 $246.5
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  • Manufacturer No:
    FDB33N25TM
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    FDB33N25TM
  • SKU:
    4149155
  • Description:
    MOSFET N-CH 250V 33A D2PAK

FDB33N25TM Details

MOSFET N-CH 250V 33A D2PAK

FDB33N25TM Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Threshold Voltage: 3V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Published: 2004
  • FET Type: N-Channel
  • Height: 4.83mm
  • Operating Mode: ENHANCEMENT MODE
  • Case Connection: DRAIN
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Vgs (Max): ±30V
  • Turn-Off Delay Time: 75 ns
  • Continuous Drain Current (ID): 33A
  • Nominal Vgs: 3 V
  • Rise Time: 230 ns
  • Weight: 1.31247g
  • Current - Continuous Drain (Id) @ 25°C: 33A Tc
  • Power Dissipation: 235W
  • Additional Feature: FAST SWITCHING, AVALANCHE RATED
  • Rds On (Max) @ Id, Vgs: 94m Ω @ 16.5A, 10V
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Terminal Form: GULL WING
  • Drain to Source Breakdown Voltage: 250V
  • Factory Lead Time: 7 Weeks
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 30V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • JESD-30 Code: R-PSSO-G2
  • Subcategory: FET General Purpose Power
  • Turn On Delay Time: 35 ns
  • Length: 10.67mm
  • Vgs(th) (Max) @ Id: 5V @ 250μA
  • Fall Time (Typ): 120 ns
  • Lifecycle Status: ACTIVE (Last Updated: 19 hours ago)
  • Series: UniFET?
  • Resistance: 94mOhm
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
  • Width: 11.33mm
  • Power Dissipation-Max: 235W Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 2135pF @ 25V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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