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  • Manufacturer No:
    FDN306P
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    4149963
  • Description:
    ON SEMICONDUCTOR - FDN306P - Power MOSFET, P Channel, 12 V, 2.6 A, 0.03 ohm, SuperSOT, Surface Mount
  • Quantity:
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Inventory:72000
  • Qty Unit Price price
  • 1 $0.176 $0.176
  • 10 $0.174 $1.74
  • 100 $0.172 $17.2
  • 1000 $0.17 $170
  • 10000 $0.1682 $1682

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  • Manufacturer No:
    FDN306P
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    FDN306P
  • SKU:
    4149963
  • Description:
    ON SEMICONDUCTOR - FDN306P - Power MOSFET, P Channel, 12 V, 2.6 A, 0.03 ohm, SuperSOT, Surface Mount

FDN306P Details

ON SEMICONDUCTOR - FDN306P - Power MOSFET, P Channel, 12 V, 2.6 A, 0.03 ohm, SuperSOT, Surface Mount

FDN306P Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Lead Free: Lead Free
  • Min Operating Temperature: -55°C
  • Factory Lead Time: 10 Weeks
  • REACH SVHC: No SVHC
  • Drain to Source Voltage (Vdss): 12V
  • Power Dissipation: 500mW
  • Published: 2001
  • Technology: MOSFET (Metal Oxide)
  • Lifecycle Status: ACTIVE (Last Updated: 5 days ago)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Length: 2.92mm
  • Drain to Source Breakdown Voltage: -12V
  • Dual Supply Voltage: -12V
  • Resistance: 40mOhm
  • Height: 940μm
  • Series: PowerTrench?
  • Current: 26A
  • Turn-Off Delay Time: 38 ns
  • Power Dissipation-Max: 500mW Ta
  • Rds On Max: 40 mΩ
  • Current - Continuous Drain (Id) @ 25°C: 2.6A Ta
  • Supplier Device Package: SuperSOT-3
  • Current Rating: -2.6A
  • Input Capacitance (Ciss) (Max) @ Vds: 1138pF @ 6V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Radiation Hardening: No
  • Contact Plating: Tin
  • Number of Pins: 3
  • Termination: SMD/SMT
  • Voltage: 12V
  • Max Operating Temperature: 150°C
  • Element Configuration: Single
  • Operating Temperature: -55°C~150°C TJ
  • Width: 1.4mm
  • Gate to Source Voltage (Vgs): 8V
  • Rise Time: 10ns
  • Fall Time (Typ): 10 ns
  • Voltage - Rated DC: -12V
  • FET Type: P-Channel
  • Drain to Source Resistance: 40mOhm
  • Turn On Delay Time: 11 ns
  • Vgs (Max): ±8V
  • Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250μA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Threshold Voltage: -600mV
  • Nominal Vgs: -600 mV
  • Continuous Drain Current (ID): -2.6A
  • Input Capacitance: 1.138nF

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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