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- Manufacturer No：STH270N8F7-2
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STH270N8F7-2
- SKU：4541089
- Description：MOSFET N-CH 80V 180A H2PAK-2
User Guide
User Guide
STH270N8F7-2 Details
MOSFET N-CH 80V 180A H2PAK-2
STH270N8F7-2 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Number of Pins: 3
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Height: 4.8mm
- Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
- Fall Time (Typ): 42 ns
- Turn On Delay Time: 56 ns
- Additional Feature: ULTRA LOW RESISTANCE
- Pulsed Drain Current-Max (IDM): 720A
- Series: DeepGATE?, STripFET? VII
- Drain-source On Resistance-Max: 0.0021Ohm
- Gate Charge (Qg) (Max) @ Vgs: 193nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 50V
- Base Part Number: STH270
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Lead Free: Lead Free
- Terminal Form: GULL WING
- Transistor Element Material: SILICON
- Factory Lead Time: 15 Weeks
- Packaging: Cut Tape (CT)
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Drain to Source Breakdown Voltage: 80V
- JESD-30 Code: R-PSSO-G2
- Width: 15.8mm
- Length: 10.4mm
- Continuous Drain Current (ID): 180A
- Subcategory: FET General Purpose Powers
- Rise Time: 180 ns
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
- Current - Continuous Drain (Id) @ 25°C: 180A Tc
- Turn-Off Delay Time: 98 ns
- Power Dissipation: 315W
- Power Dissipation-Max: 315W Tc
- Rds On (Max) @ Id, Vgs: 2.1m Ω @ 90A, 10V
- Avalanche Energy Rating (Eas): 1160 mJ
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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