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SIHP23N60E-GE3123
  • Manufacturer No:
    SIHP23N60E-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    298928
  • Description:
    MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS
  • Quantity:
      • RFQ
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Inventory:819
  • Qty Unit Price price
  • 1 $4520.387 $4520.387
  • 10 $4475.63 $44756.3
  • 100 $4431.316 $443131.6
  • 1000 $4387.441 $4387441
  • 10000 $4344 $43440000

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SIHP23N60E-GE3
  • Manufacturer No:
    SIHP23N60E-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SIHP23N60E-GE3
  • SKU:
    298928
  • Description:
    MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS

SIHP23N60E-GE3 Details

MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS

SIHP23N60E-GE3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Number of Channels: 1
  • Number of Terminations: 3
  • Factory Lead Time: 14 Weeks
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Gate to Source Voltage (Vgs): 20V
  • Packaging: Cut Tape (CT)
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Package / Case: TO-220-3
  • JEDEC-95 Code: TO-220AB
  • Vgs (Max): ±30V
  • Weight: 6.000006g
  • Turn-Off Delay Time: 66 ns
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Power Dissipation-Max: 227W Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 2418pF @ 100V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Number of Pins: 3
  • Published: 2014
  • Transistor Element Material: SILICON
  • Drain to Source Voltage (Vdss): 600V
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Continuous Drain Current (ID): 23A
  • Drain to Source Breakdown Voltage: 650V
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Turn On Delay Time: 22 ns
  • Fall Time (Typ): 34 ns
  • Current - Continuous Drain (Id) @ 25°C: 23A Tc
  • Rise Time: 38ns
  • Rds On (Max) @ Id, Vgs: 158m Ω @ 12A, 10V

Excellent

Based on reviews

Excellent

Based on reviews

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