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- Manufacturer No：STP3NK80Z
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STP3NK80Z
- SKU：4547263
- Description：Trans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) TO-220 Tube
User Guide
User Guide
STP3NK80Z Details
Trans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) TO-220 Tube
STP3NK80Z Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Factory Lead Time: 12 Weeks
- Number of Terminations: 3
- Pin Count: 3
- Terminal Finish: Matte Tin (Sn)
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 30V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Continuous Drain Current (ID): 2.5A
- Voltage - Rated DC: 800V
- Package / Case: TO-220-3
- JEDEC-95 Code: TO-220AB
- Vgs (Max): ±30V
- Fall Time (Typ): 40 ns
- Resistance: 4.5Ohm
- Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
- Rise Time: 27 ns
- Threshold Voltage: 3.75V
- Vgs(th) (Max) @ Id: 4.5V @ 50μA
- Series: SuperMESH?
- Current - Continuous Drain (Id) @ 25°C: 2.5A Tc
- Base Part Number: STP3N
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Current Rating: 2.5A
- Operating Mode: ENHANCEMENT MODE
- Drain to Source Breakdown Voltage: 800V
- Subcategory: FET General Purpose Power
- Width: 4.6mm
- Length: 10.4mm
- Additional Feature: AVALANCHE RATED
- Turn On Delay Time: 17 ns
- Power Dissipation: 70W
- Turn-Off Delay Time: 36 ns
- Height: 9.15mm
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Power Dissipation-Max: 70W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 25V
- Rds On (Max) @ Id, Vgs: 4.5 Ω @ 1.25A, 10V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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