Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:4453
- Qty Unit Price price
- 1 $1.115 $1.115
- 10 $1.103 $11.03
- 100 $1.092 $109.2
- 1000 $1.081 $1081
- 10000 $1.07 $10700
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：STD6NF10T4
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STD6NF10T4
- SKU：4548909
- Description：MOSFET N-CH 100V 6A DPAK
User Guide
User Guide
STD6NF10T4 Details
MOSFET N-CH 100V 6A DPAK
STD6NF10T4 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 3
- Continuous Drain Current (ID): 3A
- REACH SVHC: No SVHC
- Voltage - Rated DC: 100V
- Terminal Finish: Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Current Rating: 6A
- FET Type: N-Channel
- Threshold Voltage: 4V
- Operating Mode: ENHANCEMENT MODE
- Power Dissipation: 30W
- JESD-30 Code: R-PSSO-G2
- Subcategory: FET General Purpose Power
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Turn-Off Delay Time: 20 ns
- Lifecycle Status: ACTIVE (Last Updated: 7 months ago)
- Pulsed Drain Current-Max (IDM): 24A
- Fall Time (Typ): 3 ns
- Operating Temperature: -65°C~175°C TJ
- Power Dissipation-Max: 30W Tc
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Additional Feature: LOW THRESHOLD
- Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
- Rds On (Max) @ Id, Vgs: 250m Ω @ 3A, 10V
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Pin Count: 3
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Drain to Source Breakdown Voltage: 100V
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Drain Current-Max (Abs) (ID): 6A
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Rise Time: 10ns
- Case Connection: DRAIN
- Length: 6.6mm
- Width: 6.2mm
- Height: 2.4mm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Turn On Delay Time: 6 ns
- Resistance: 250mOhm
- JEDEC-95 Code: TO-252AA
- Current - Continuous Drain (Id) @ 25°C: 6A Tc
- Avalanche Energy Rating (Eas): 200 mJ
- Series: STripFET?
- Base Part Number: STD6N
Search for similar products
STD6NF10T4 Similar Products
The four parts on the right have similar specifications to STMicroelectronics & STD6NF10T4
STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
